fast switching thyristor ATF633 repetitive voltage up to 2100 v mean on-state current 1390 a surge current 17 ka final specification turn-off time 60 s mag 06 - issue : 3 symbol characteristic conditions tj [c] value unit blocking v rrm repetitive peak reverse voltage 125 2100 v v rsm non-repetitive peak reverse voltage 125 2000 v v drm repetitive peak off-state voltage 125 2100 v i rrm repetitive peak reverse current v=vrrm 125 100 ma i drm repetitive peak off-state current v=vdrm 125 100 ma conducting i t (av) mean on-state current 180 sin, 50 hz, th=55c, doub le side cooled 1390 a i t (av) mean on-state current 180 sin, 1 khz, th=55c, dou ble side cooled 1345 a i tsm surge on-state current, non repetitive sine wave, 1 0 ms 125 17 ka i2 t i2 t without reverse voltage 1445 x1e3 a2s v t on-state voltage on-state current = 2000 a 25 1,94 v v t(to) threshold voltage 125 1,30 v r t on-state slope resistance 125 0,320 mohm switching di/dt critical rate of rise of on-state current, min from 75% vdrm up to 1200 a, gate 10v 5 ohm 125 400 a/ s dv/dt critical rate of rise of off-state voltage, mi n linear ramp up to 75% of vdrm 125 600 v/s td gate controlled delay time, typical vd=200v, gate source 20v, 10 ohm , tr=.5 s 25 0,8 s tq circuit commutated turn-off time di/dt = 60 a/s, i= 1000 a i = 1000 a 125 60 s dv/dt = 200 v/s , up to 80% vdrm q rr reverse recovery charge di/dt = 60 a/s, i= 1000 a i = 1000 a 125 450 c i rr peak reverse recovery current vr = 50 v 195 a i h holding current, typical vd=5v, gate open circuit 25 ma i l latching current, typical vd=12v, tp=30s 25 ma gate v gt gate trigger voltage vd=5v 25 3,5 v i gt gate trigger current vd=5v 25 350 ma v gd non-trigger gate voltage, min. vd=vdrm 125 0,25 v v fgm peak gate voltage (forward) 25 30 v i fgm peak gate current 25 10 a v rgm peak gate voltage (reverse) 25 5 v p gm peak gate power dissipation pulse width 100 s 25 150 w p g(av) average gate power dissipation 25 2 w mounting r th(j-h) thermal impedance, dc junction to heatsink, double s ide cooled 21 c/kw t j operating junction temperature -30 / 125 c f mounting force 17.0 / 21.0 kn mass 520 g tq code d 10 s c 12 s b 15 s a 20 s l 25 s ordering information : ATF633 s 21 t tq code m 30 s n 35 s p 40 s r 45 s s 50 s standard specification vdrm&vrrm/100 t 60 s u 70 s w 80 s x 100s y 150s poseico spa power semiconductors italian corporation poseico poseico spa via n. lorenzi 8, 16152 genova - italy tel. +39 010 6556234 - fax +39 010 6557519 sales office: tel. +39 010 6556775 - fax +39 010 6445141
ATF633 fast switching thyristor final specification mag 06 - issue : 3 switching characteristics reverse recovery current tj = 125 c 0 200 400 600 800 0 50 100 150 200 250 300 350 400 di/dt [a/s] irr [a] 1500 a 1000 a 500 a ta = irr / (di/dt) tb = trr - ta softness (s factor) s = tb / ta energy dissipation during recovery er = vr (qrr - irr ta / 2 ) di/dt irr i f ta tb vr reverse recovery charge tj = 125 c 0 200 400 600 800 1000 1200 1400 0 50 100 150 200 250 300 350 400 di/dt [a/s] qrr [c] 500 a 1000 a 1500 a poseico spa power semiconductors italian corporation poseico
ATF633 fast switching thyristor final specification mag 06 - issue : 3 cathode terminal type din 46244 - a 4.8 - 0.8 gate terminal type amp 60598 - 1 distributed by on-state characteristic tj = 125 c 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0,6 1,1 1,6 2,1 2,6 on-state voltage [v] on-state current [a] transient thermal impedance double side cooled 0 5 10 15 20 25 30 35 0,001 0,01 0,1 1 10 100 t[s] zth j-h [c/kw] surge characteristic tj = 125 c 0 2 4 6 8 10 12 14 16 18 1 10 100 n cycles itsm [ka] all the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, su rfaces with flatness < .03 mm and roughness < 2 m. in the interest of product improvement poseico s.p.a. reser ves the right to change any data given in this data sheet at any time witho ut previous notice. if not stated otherwise the maximum value of ratings (simbol s over shaded background) and characteristics is reported. poseico spa power semiconductors italian corporation poseico
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